Silicon Thermal Oxide Thickness Calculator
What would you like to do?
Find the oxide thickness, given
Time =
HH
0
: MM
0
: SS
0
OR,
Find the required oxidation time, given
DESIRED THICKNESS =
Å
Initial Oxide:
Å
TEMPERATURE:
700°C
750°C
800°C
850°C
900°C
950°C
1000°C
1050°C
1100°C
1150°C
CRYSTAL ORIENTATION:
<100>
<111>
<110>
poly-Si
AMBIENT:
dry
wet
partial pressure:
atm
Active Dopant Concentration
(optional):
p-type
n-type
level:
per cc
OPTIONS:
Use Massoud Model if appropriate
Use Strict Deal-Grove (Legacy code)
Use advanced doping models, if possible
Calculator Code by Eric Perozziello ©2001-2006. All Rights Reserved.